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TYPICAL APPLICATIONS (cont.)
BASIC CURRENT SOURCES
N-CHANNEL CURRENT SOURCE
V+ = +5V
P-CHANNEL CURRENT SOURCE
V+ = +5V
I SOURCE
I SET
R SET
8
1/2 ALD1103
7
Q 2 8
5
6
2
3
Q 1
Q 3
3
2
6
5
Q 4
7
1
I SOURCE
1/2 ALD1103
I SET
R SET
V+ - 1.0 ~
I SOURCE = I SET =
V+ - Vt
R SET
= ~
R SET
=
4
R SET
Q 1, Q 2 : N - Channel MOSFET
Q 3 , Q 4 : P - Channel MOSFET
CASCODE CURRENT SOURCES
V+ = +5V
V+ = +5V
I SET
R SET
I SOURCE
Q 4
Q 2
Q 3
Q 1
Q 1
Q 3
Q 2
Q 4
I SET
R SET
I SOURCE
I SOURCE = I SET =
V+ - 2Vt
R SET
= ~
3
R SET
Q 1 , Q 2 , Q 3 , Q 4 : N - Channel MOSFET
(ALD1101 or ALD1103)
Q1, Q2, Q3, Q4: P - Channel MOSFET
(ALD1102 or ALD1103)
ALD1103
Advanced Linear Devices
6 of 9
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相关代理商/技术参数
ALD1103SB 功能描述:MOSFET Dual P&N-Ch. Pair RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ALD1103SBL 功能描述:MOSFET Dual P&N-Ch. Pair RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ALD1105 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED PAIR MOSFET
ALD1105_12 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR
ALD1105DB 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED PAIR MOSFET
ALD1105PB 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED PAIR MOSFET
ALD1105PBL 功能描述:MOSFET Dual P&N-Ch. Pair RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ALD1105SB 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED PAIR MOSFET